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Your cart is empty. PD Maximum power dissipation: 48W
ID Maximum drain-source current: 9.7A
V(BR)DSS drain-source breakdown voltage: 100V
RDS(ON)Ω internal resistance: 0.2Ω
VRDS(ON)ld on-state current: 5.7A
VRDS(ON)gate voltage: 10V
VGS(th)V turn-on voltage: 2~4V
VGS(th)ld(μA) turn-on current: 250μA
IRF520N is a commonly used power field effect transistor with a wide range of applications in electronic circuits:
Communication equipment: IRF520N is used in communication equipment for power amplification and switching control to ensure the stability of signal transmission.
Automotive electronics: In automotive electronics systems, IRF520N is commonly used to control the motor drive and power management of electric vehicles.
Industrial control: In the field of industrial automation, IRF520N can be used to control high-power devices, robots and sensors, etc.
Power management: IRF520N can be used to design voltage regulators, switching power supplies and battery management systems.
LED lighting: In LED lighting control circuits, the IRF520N can be used for dimming and switching control to improve the efficiency and flexibility of lighting systems.
Package include:
12 x IRF520N MOSFET transistor